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DMP2225L
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
-20
±12
Units
V
V
Continuous Drain Current (Note 5)
Pulsed Drain Current (Note 6)
Stead
State
T A = +25°C
T A = +70°C
I D
I DM
-2.6
-2
8
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @T A = +25°C (Note 5)
Operating and Storage Temperature Range
Symbol
P D
R θ JA
T J, T STG
Value
1.08
115
-55 to +150
Units
W
°C/W
°C
Electrical Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
On-State Drain Current
Gate-Source Leakage
BV DSS
I DSS
I D(ON)
I GSS
-20
—
-6
-3
—
—
—
—
—
—
—
-800
—
—
±80
V
nA
A
nA
V GS = 0V, I D = -250μA
V DS = -20V, V GS = 0V
V DS ≤ -5V, V GS = -4.5V
V DS ≤ -5V, V GS = -2.5V
V GS = ±12V, V DS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 6)
V GS(th)
R DS (ON)
|Y fs |
V SD
-0.45
—
—
—
—
80
165
4
—
-1.25
110
225
—
-1.26
V
m ?
S
V
V DS = V GS , I D = -250μA
V GS = -4.5V, I D = -2.6A
V GS = -2.5V, I D = -2.0A
V DS = -5V, I D = -2.6A
V GS = 0V, I S = -2.6A
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
C iss
C oss
C rss
R g
Q g
Q gs
Q gd
—
—
—
—
—
—
—
250
88
58
12
4.3
0.9
2.1
—
—
—
16
5.3
—
—
pF
pF
pF
?
nC
V DS = -10V, V GS = 0V
f = 1.0MHz
V GS = 0V, V DS = 0V, f = 1MHz
V GS = -4.5V, V DS = -10V,
I D = -2.7A
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Repetitive rating, pulse width limited by junction temperature.
7. Short duration pulse test used to minimize self-heating effect.
DMP2225L
Document number: DS31461 Rev. 5 - 2
2 of 6
www.diodes.com
January 2013
? Diodes Incorporated
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